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| SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOS(R) Buck converter series Feature *N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 5.9 80 P- TO220 -3-1 V m A *Enhancement mode *Logic Level *Low On-Resistance RDS(on) *Excellent Gate Charge x R DS(on) product (FOM) *Superior thermal resistance *175C operating temperature *Avalanche rated *dv/dt rated Type SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4088 Q67042-S4089 Q67042-S4092 Marking 2N03L06 2N03L06 2N03L06 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current 1) TC=25C Symbol ID Value Unit A 80 80 Pulsed drain current TC=25C ID puls 320 Avalanche energy, single pulse ID=20A, V DD=25V, RGS=25 EAS 240 mJ Repetitive avalanche energy, limited by T jmax2) Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/s, Tjmax=175C EAR dv/dt 15 6 kV/s Gate source voltage Power dissipation TC=25C VGS Ptot 20 150 V W Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 Tj , Tstg -55... +175 55/175/56 C 2003-01-17 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Thermal Characteristics Parameter Symbol min. Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Values typ. max. Unit RthJC RthJA - 0.68 1 K/W - - 62 40 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS=0V, I D=1mA Values typ. max. Unit V(BR)DSS 30 - - V Gate threshold voltage, V GS = VDS ID = 80 A VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, V GS=0V, T j=25C VDS=30V, V GS=0V, T j=125C IDSS IGSS 0.01 10 1 1 100 100 A Gate-source leakage current VGS=20V, VDS=0V nA Drain-source on-state resistance VGS=4.5V, ID=80A VGS=4.5V, ID=80A, SMD version RDS(on) RDS(on) 5 4.6 6.2 5.9 7 6.6 9.5 9.2 m Drain-source on-state resistance4) VGS=10V, ID=80A VGS=10V, ID=80A, SMD version 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 120A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-01-17 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Electrical Characteristics Parameter Symbol Conditions min. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max, ID=80A Values typ. max. Unit 44 88 - S Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Ciss Coss Crss td(on) tr td(off) tf VGS=0V, VDS =25V, f=1MHz - 1900 740 175 10 23 73 61 2530 990 265 15 35 109 91 pF VDD=15V, VGS=10V, ID=20A, RG =3.6 - ns Qgs Qgd Qg VDD=24V, ID=80A - 6 18 51 8 27 68 nC VDD=24V, ID=80A, VGS=0 to 10V - Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge V(plateau) VDD=24V, ID=80A - 3.1 - V IS TC=25C - - 80 A I SM VSD t rr Q rr VGS =0V, IF =80A VR =15V, IF =lS , diF /dt=100A/s - 0.9 41 46 320 1.3 52 58 V ns nC Page 3 2003-01-17 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 1 Power dissipation Ptot = f (TC) 2 Drain current I D = f (TC) parameter: VGS 10 V 160 SPP80N03S2L-06 90 SPP80N03S2L-06 W A 120 70 60 Ptot 100 ID 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 C 190 80 60 40 20 0 0 20 40 60 80 100 120 140 160 C 190 TC TC 4 Max. transient thermal impedance Z thJC = f (tp) parameter : D = tp/T 10 1 SPP80N03S2L-06 3 Safe operating area I D = f ( VDS ) parameter : D = 0 , T C = 25 C 10 3 SPP80N03S2L-06 K/W A /I D tp = 22.0s 10 0 V DS 10 2 Z thJC 10 -1 = R DS (on ) ID 100 s 10 -2 D = 0.50 1 ms 0.20 10 -3 10 1 10 ms 0.10 0.05 single pulse 0.02 0.01 DC 10 -4 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-17 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 5 Typ. output characteristic I D = f (VDS); Tj=25C parameter: t p = 80 s 190 SPP80N03S2L-06 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 100 VGS [V]= a= 3.5 b= 4 c= 4.5 d= 5 e= 6 f= 10 Ptot = 150W e fd VGS [V] a 3.5 b 4.0 4.5 5.0 6.0 10.0 A 160 140 c m a b c 80 c d RDS(on) 70 60 50 ID 120 100 b e f 80 60 40 20 0 0 40 30 a d 20 10 0 0 e f 0.5 1 1.5 2 2.5 3 3.5 4 V 5 20 40 60 80 100 120 140 160 A 200 VDS 7 Typ. transfer characteristics I D= f ( VGS ); V DS 2 x ID x R DS(on)max parameter: t p = 80 s 160 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: gfs 120 S A 100 120 90 100 g fs 0.5 1 1.5 2 2.5 3 3.5 4 ID 80 70 80 60 50 60 40 40 30 20 20 10 0 0 V5 VGS Page 5 0 0 20 40 60 80 A ID 120 2003-01-17 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, V GS = 10 V SPP80N03S2L-06 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 3 m 15 V 12 RDS(on) VGS(th) 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 140 C 1mA 2 98% 1.5 typ 83A 1 0.5 200 0 -60 -20 20 60 100 C 180 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPP80N03S2L-06 A pF Ciss 10 2 C 10 3 Coss IF 10 1 Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-01-17 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 13 Typ. avalanche energy EAS = f (T j) par.: I D = 20 A, V DD = 25 V, R GS = 25 260 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 80 A pulsed 16 SPP80N03S2L-06 mJ V 220 200 12 E AS VGS 180 160 140 10 0,2 VDS max 8 0,8 VDS max 120 100 80 60 40 20 0 25 45 65 85 105 125 145 4 6 2 C 185 Tj 0 0 10 20 30 40 50 60 nC 80 Q Gate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: I D=10 mA 36 SPP80N03S2L-06 V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 2003-01-17 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2L-06, BSPB80N03S2L-06 and BSPI80N03S2L-06, for simplicity the device is referred to by the term SPP80N03S2L-06, SPB80N03S2L-06 and SPI80N03S2L-06 throughout this documentation Page 8 2003-01-17 |
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